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Semiconductor Components Industries, LLC, 2009
August, 2009 ?
Rev. 5
1
Publication Order Number:
BAV74LT1/D
BAV74LT1G
Monolithic Dual
Switching Diode
Features
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
50
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board
(Note 1), TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA
= 25
°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
SOT?23
CASE 318
STYLE 9
http://onsemi.com
MARKING DIAGRAM
1
2
3
Device Package Shipping?
ORDERING INFORMATION
BAV74LT1G SOT?23
(Pb?Free)
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
ANODE
1
2
ANODE
BAV74LT3G SOT?23
(Pb?Free)
10,000/Tape & Reel
1
JA M
JA = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
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相关代理商/技术参数
BAV74LT1G 制造商:ON Semiconductor 功能描述:RECTIFIER DIODES COMMON CATHODE 50V V( 制造商:ON Semiconductor 功能描述:DIODE, SWITCHING, 50V, SOT-23
BAV74LT3 功能描述:二极管 - 通用，功率，开关 50V 200mA Dual RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
BAV74LT3G 功能描述:二极管 - 通用，功率，开关 50V 200mA Dual Common Cathode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
BAV74T/R 制造商:NXP Semiconductors 功能描述:DIODE SW TAPE-7
BAV74TA 功能描述:二极管 - 通用，功率，开关 - RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
BAV74TC 功能描述:二极管 - 通用，功率，开关 - RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
BAV756 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:High-speed switching diode array
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